Title :
2d-modeling of exclusion effect in the base of semiconductor device
Author :
Malyutenko, V. ; Borblik, V. ; Klimov, A.
Author_Institution :
Inst. of Semicond., Kiev, Ukraine
Abstract :
By means of direct numerical solution of 2-dimensional transport equations an influence of surface generation-recombination on exclusion effect is investigated. Both nonsymmetric p+/π- and symmetric p+πp+-structures are considered. Generation of added carriers at the side surfaces of π-base moderates noticeably exclusion effect and increases current value. As a result of transversal inhomogeneity of the voltage drop across reverse biased p +π-junction the peaks of electric field appear near the junction
Keywords :
semiconductor device models; 2D model; carrier concentration; electric field; exclusion effect; p+π junction; p+πp+ junction; semiconductor device; surface generation-recombination; two-dimensional transport equation; Boundary conditions; Charge carrier density; Charge carrier processes; Current density; Electric potential; Electron mobility; Laplace equations; Physics; Radiative recombination; Semiconductor devices;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730198
