DocumentCode :
2341455
Title :
Investigation of the dose loss during annealing in nitrogen of shallow-implanted arsenic
Author :
Farhane, R.E. ; Salvetti, F. ; Wacquant, F. ; Laviron, C. ; Fromen, B. ; Muller, M. ; Pouydebasque, A. ; Halimaoui, A.
Author_Institution :
Philips, Crolles, France
fYear :
2003
fDate :
23-26 Sept. 2003
Firstpage :
173
Lastpage :
176
Abstract :
Arsenic implanted into silicon at 2 keV to a dose of 1×1015 cm-2 is annealed over a wide range of temperature (from 700 to 1100°C) and time (from spike to 240 sec) in a nitrogen ambient in order to investigate the various thermally-activated phenomena: Activation, Diffusion and Out-diffusion. X-ray Fluorescence (XRF), Sheet resistance (Rs) measurements and TCAD simulation have been used to determine the trade-off between activation and dose loss by out-diffusion. It is shown that above a threshold temperature, there is a dramatic increase in the dose loss. For the implant conditions we used, this threshold temperature is found to be about 950°C.
Keywords :
X-ray fluorescence analysis; annealing; arsenic; diffusion; electrical resistivity; elemental semiconductors; ion implantation; nitrogen; semiconductor process modelling; silicon; technology CAD (electronics); 2 keV; 240 sec; 700 to 1100 degC; N; Si:As; TCAD; X-ray Fluorescence; activation; annealing; diffusion; dose loss; outdiffusion; shallow-implanted arsenic; sheet resistance; technology CAD; thermally-activated phenomena; Electrical resistance measurement; Fluorescence; Implants; Loss measurement; MOS devices; Nitrogen; Rapid thermal annealing; Silicon; Surface resistance; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2003. RTP 2003. 11th IEEE International Conference on
Print_ISBN :
0-7803-7874-1
Type :
conf
DOI :
10.1109/RTP.2003.1249144
Filename :
1249144
Link To Document :
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