Title :
An examination of athermal, photonic effects on boron diffusion and activation during microwave rapid thermal processing
Author :
Bonifas, Christopher ; Thompson, Keith ; Booske, John ; Cooper, Reid
Author_Institution :
Electr. & Comput. Eng., Univ. of Wisconsin, Madison, WI, USA
Abstract :
This paper details work demonstrating the effect of athermal mechanisms involving optical and microwave illumination on the flux of dopants in ultra-shallow doped Si layers. Optical illumination has a significant, yet transient, effect on the formation of ultra-shallow junctions in B doped Si. Rapid thermal annealing was performed on both B-only and BF2 implanted silicon samples. During microwave annealing, the optically illuminated samples illustrated a greater amount of B diffusion with respect to the non-illuminated samples for the B-only implanted Si, while the reverse was true for the BF2 implanted samples. In addition to a deeper junction depth, the illuminated samples had a lower sheet resistance. Both illuminated and non-illuminated samples fall on the same Rs-Xj curve, indicating a shift in optimal anneal temperature and not an improvement in junction formation. The relative difference in the diffusion depth of B between the illuminated and non-illuminated samples was dependent on the oxygen concentration in the ambient during the anneal.
Keywords :
boron; boron compounds; diffusion; electrical resistivity; elemental semiconductors; rapid thermal annealing; silicon; BF2; BF2 implanted silicon; Si:B; athermal mechanisms; boron diffusion; microwave annealing; microwave illumination; microwave rapid thermal processing; optical illumination; oxygen concentration; photonic effects; rapid thermal annealing; sheet resistance; ultra-shallow doped Si layers; Boron; Electromagnetic heating; Lattices; Lighting; Optical transmitters; Rapid thermal annealing; Rapid thermal processing; Resonance; Silicon; Temperature;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2003. RTP 2003. 11th IEEE International Conference on
Print_ISBN :
0-7803-7874-1
DOI :
10.1109/RTP.2003.1249149