DocumentCode :
2341622
Title :
Transition between coherent to incoherent superlattices transport
Author :
Rauch, C. ; Strasser, G. ; Gornik, E.
Author_Institution :
Inst. fur Festkorperelektronik, Tech. Univ. Wien, Austria
fYear :
1998
fDate :
5-7 Oct 1998
Firstpage :
267
Lastpage :
274
Abstract :
Ballistic electron transport is used to study the transmittance of GaAs/GaAlAs superlattice. In a three terminal transistor type devices an energy tunable electron beam is injected via a tunneling barrier into an undoped superlattice. The transmitted current is measured as function of the injector energy. Resonance in the collector current are observed due to miniband conduction in the GaAs/AlGaAs superlattice. A significant decreased of the miniband transmission is observed with increasing electric field across the superlattice, which is attributed to the the quenching of coherent transport. For longer superlattices an asymmetry between positive and negative bias is found which is assigned to the transition between coherent and incoherent transport
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor superlattices; tunnelling; GaAs-GaAlAs; GaAs/GaAlAs superlattice; ballistic electron transport; coherent transport; collector current resonance; electric field; electron beam injection; incoherent transport; miniband conduction; three terminal transistor device; transmittance; tunneling barrier; Dispersion; Electron beams; Gallium arsenide; Optical scattering; Particle scattering; Quantum mechanics; Resonance; Superlattices; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
0-7803-4909-1
Type :
conf
DOI :
10.1109/ASDAM.1998.730215
Filename :
730215
Link To Document :
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