Title :
The use of microwaves to characterize optically stimulated semiconductors
Author_Institution :
Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA
Abstract :
The author discusses a theoretical model describing the microwave transmission and reflection properties of semiconductor wafers after they have been illuminated by a short pulse of light from a laser. The model has three fundamental parts. The first part describes the absorption mechanism of the incident light pulse throughout the semiconductor, given the electron-hole-pair concentration as a function of position. In the second part the electron-hole-pair concentration during the decay process is described. Part three describes the microwave properties of the semiconductor as the electron-hole pairs return to their equilibrium state
Keywords :
electron-hole recombination; microwave measurement; semiconductors; waveguide theory; absorption mechanism; decay process; electron-hole-pair concentration; equilibrium state; light pulse; microwave reflection; microwave transmission; optically stimulated semiconductors; wafers; Electromagnetic wave absorption; Maxwell equations; Optical computing; Optical pulse generation; Optical reflection; Optical waveguides; Photonic band gap; Semiconductor device modeling; Semiconductor waveguides; Stimulated emission;
Conference_Titel :
System Theory, 1990., Twenty-Second Southeastern Symposium on
Conference_Location :
Cookeville, TN
Print_ISBN :
0-8186-2038-2
DOI :
10.1109/SSST.1990.138220
