Title :
A Ku-band frequency converter using 0.25 /spl mu/m PHEMT technology
Author :
Virk, R.S. ; Camargo, E. ; Shimizu, H. ; Ichikawa, S.
Author_Institution :
Fujitsu Compound Semicond. Inc., San Jose, CA, USA
Abstract :
The design and performance of a Ku-band frequency converter is described for a 0.25 /spl mu/m GaAs pHEMT technology. The 1.0/spl times/1.6 mm/sup 2/ mixer chip provides as low as 4.5 dB up-conversion loss and 7 dB down-conversion loss over the Ku-band where f/sub IF/=1 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC frequency convertors; MMIC mixers; gallium arsenide; 0.25 micron; 4.5 dB; 7 dB; GaAs; GaAs PHEMT technology; Ku-band; down-conversion loss; dual-function MMIC chip; frequency converter; mixer; up-conversion loss; Bandwidth; Coupling circuits; Diodes; Frequency conversion; Gallium arsenide; Impedance matching; Integrated circuit technology; PHEMTs; Radio frequency; Spirals;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.863265
