Title :
Low temperatures in RTP
Author :
Gutt, Th ; Steinegger, Th
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
Even though RTP was originally designed for temperatures from 700 to 1200°C the processes with lower temperatures gain more and more importance. Steady state temperatures down to 300°C make temperature control from 200°C necessary. These processes occur in silicon and in compound semiconductor production. The problems of working at low temperature and the reflow of Au-Sn solder bumps as an example are presented.
Keywords :
pyrometers; rapid thermal processing; temperature control; temperature distribution; temperature measurement; thermocouples; 200 degC; 300 degC; Au-Sn; Au-Sn solder bumps reflow; Si; compound semiconductor; low temperature RTP; pyrometer; rapid thermal processing; susceptor; temperature control; temperature measurement; temperature monitoring; temperature profile; thermocouple; Control systems; Cooling; Open loop systems; Optical control; Production; Shape control; Steady-state; Switches; Temperature control; Temperature measurement;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2002. RTP 2002. 10th IEEE International Conference of
Print_ISBN :
0-7803-7465-7
DOI :
10.1109/RTP.2002.1039456
