DocumentCode :
2342653
Title :
Cycle time and process improvement by single wafer thermal processing in production environment
Author :
Chen, K.C. ; Shih, H.H. ; Hsueh, C. ; Chung, H. ; Pam, S. ; Lu, C.Y. ; Chou, C.W. ; Chen, S.S.
fYear :
2002
fDate :
2002
Firstpage :
171
Lastpage :
176
Abstract :
We have demonstrated that cycle time reduction, accelerated yield learning and product introduction can be achieved by single-wafer processing without a major impact on wafer production cost. The oxidation mechanism reveals that the ISSG oxide growth is diffusion controlled. Our results indicate the reliability of ISSG oxide is considerably improved as the process temperature increases with respect to charge-to-breakdown (Qbd). Such enhanced reliability of the ISSG oxide may be explained by the reduction of the dangling bonds as the oxidation temperature increases. In addition, the ISSG process improves the corner rounding of STI, which results in the elimination of the crystal defects in silicon.
Keywords :
elemental semiconductors; isolation technology; oxidation; rapid thermal processing; semiconductor device breakdown; semiconductor device manufacture; semiconductor device reliability; semiconductor process modelling; silicon; STI corner rounding; Si; Si-SiO2; accelerated product introduction; accelerated yield learning; charge-to-breakdown; cycle time reduction; dangling bonds; defect elimination; diffusion controlled oxide growth; in-situ steam generation; oxidation mechanism; oxidation temperature; oxide reliability; process temperature; processing models; production environment; shallow trench isolation; single wafer thermal processing; wafer production cost; Acceleration; Costs; Delay; Economics; Furnaces; Oxidation; Production; Semiconductor device modeling; Silicon; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2002. RTP 2002. 10th IEEE International Conference of
Print_ISBN :
0-7803-7465-7
Type :
conf
DOI :
10.1109/RTP.2002.1039457
Filename :
1039457
Link To Document :
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