DocumentCode :
2343342
Title :
An accurate preprocessor for Monte Carlo study of electron transport in inversion layers of silicon nMOSFETs
Author :
Wei-Kai Shih ; Hareland, S. ; Jallepalli, S. ; Maziar, C.M. ; Tasch, A.F.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fYear :
1996
fDate :
26-26 June 1996
Firstpage :
28
Lastpage :
29
Abstract :
Summary form only given. For a typical device simulation one cannot ignore the presence of nonuniformity in realistic MOSFET inversion layers. In this case, computationally demanding Schrodinger-MC-Poisson iteration (SMCPT) seems to be the only viable methodology. In this paper, we present an alternative approach that efficiently includes the quantization effect in the drift-diffusion preprocessing step such that the transport characteristics can be accurately captured without using a SMCPT. For this purpose, PISCES has been chosen as the preprocessor, allowing channel quantization effects to be ignored or treated with either of two models: the 3-subband model (3SB) and the van Dort model.
Keywords :
MOS capacitors; MOSFET; Monte Carlo methods; digital simulation; elemental semiconductors; inversion layers; semiconductor device models; silicon; 3-subband model; Monte Carlo study; PISCES; Si; channel quantization effects; device simulation; drift-diffusion preprocessing step; electron transport; inversion layers; nMOSFETs; nonuniformity; transport characteristics; van Dort model; Artificial intelligence; Electrons; MOSFET circuits; Monte Carlo methods; Poisson equations; Quantization; Schrodinger equation; Silicon; Solid state circuits; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-3358-6
Type :
conf
DOI :
10.1109/DRC.1996.546303
Filename :
546303
Link To Document :
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