Title :
Internal ESD transients in input protection circuits
Author :
Fong, Y. ; Hu, C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
The operation of a popular thick-field-device/grounded-gate transistor combination input protection circuit under electrostatic-discharge (ESD) stress is studied using a special test circuit. By monitoring internal voltages and currents, it was possible to observe how each element in the protection circuit contributed to the overall ESD protection. By means of the special test circuit it was determined that no degradation of the first gate-oxide transistor took place under ESD stress
Keywords :
MOS integrated circuits; electrostatic discharge; integrated circuit technology; protection; transients; ESD protection; electrostatic-discharge; input protection circuits; internal ESD transients; internal currents; internal voltages; test circuit; thick-field-device/grounded-gate transistor; Bonding; Circuit testing; Degradation; Diodes; Electrostatic discharge; Inverters; Protection; Resistors; Stress; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/RELPHY.1989.36321
