DocumentCode :
2345073
Title :
Hot-carrier induced instability of 0.5 μm CMOS devices patterned using synchrotron X-ray lithography
Author :
Hsu, C.C.-H. ; Wang, L.K. ; Sun, J.Y.-C. ; Wordeman, M.R. ; Ning, T.H.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear :
1989
fDate :
11-13 Apr 1989
Firstpage :
189
Lastpage :
192
Abstract :
The device characteristics and the radiation damage of n-channel and p-channel MOSFETs patterned using synchrotron X-ray lithography are examined. The effect of radiation damage caused by X-ray lithography on the device reliability during hot electron injection is investigated. Large amounts of positive oxide charge, neutral traps, and acceptor-like interface states are created by X-ray irradiation during the lithography process. Although several annealing steps are performed throughout the entire fabrication process, the radiation damage, particularly neutron traps, is not completely annealed out. The hot-electron-induced instability in p-channel MOSFETs is significantly increased due to the enhanced electron trapping in the oxide by residual traps. The effect of radiation on hot-electron-induced instability is found to be more severe in n+-poly buried-channel n-MOSFETs than in p+-poly surface-channel p-MOSFETs. However, the degradation in n-channel MOSFETs due to channel hot carriers is not significantly increased by X-ray lithography since the n-channel MOSFETs hot-carrier-induced degradation is dominated by interface state generation instead of electron trapping. These results suggest that p-channel MOSFETs, in addition to n-channel MOSFETs, need to be carefully examined in terms of hot-carrier-induced instability in CMOS VLSI circuits patterned using X-ray lithography
Keywords :
CMOS integrated circuits; VLSI; X-ray lithography; electron traps; hole traps; hot carriers; insulated gate field effect transistors; interface electron states; semiconductor device testing; 0.5 micron; CMOS VLSI circuits; CMOS devices; acceptor-like interface states; annealing steps; device reliability; enhanced electron trapping; hot electron injection; hot-electron-induced instability; n-channel MOSFETs; neutral traps; p-channel MOSFETs; positive oxide charge; radiation damage; synchrotron X-ray lithography; Annealing; Degradation; Electron traps; Fabrication; Hot carriers; Interface states; MOSFET circuits; Secondary generated hot electron injection; Synchrotron radiation; X-ray lithography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
Conference_Location :
Phoenix, AZ
Type :
conf
DOI :
10.1109/RELPHY.1989.36343
Filename :
36343
Link To Document :
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