Title :
Electromigration of ionized cluster beam deposited aluminum metallizations
Author_Institution :
Dept. of Mater. Sci. & Eng., Florida Univ., Gainesville, FL, USA
Abstract :
The activation energy of electromigration for ionized-cluster-beam-deposited aluminum films on 7000-Å-thick SiO 2 was found to be 1.1 eV compared to 0.5 eV, for conventionally deposited aluminum films. Aluminum films on oxide-free silicon did not show any hole formation or resistance increase during DC stressing
Keywords :
aluminium; electromigration; metallic thin films; metallisation; vapour deposited coatings; Al-SiO2; DC stressing; SiO2; activation energy; electromigration; ionised cluster beam deposition; Aluminum; Electromigration; Ion beams; Metallization; Particle beams; Semiconductor films; Silicon; Strips; Substrates; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/RELPHY.1989.36346