DocumentCode :
2345126
Title :
Electromigration of ionized cluster beam deposited aluminum metallizations
Author :
Hummel, R.E.
Author_Institution :
Dept. of Mater. Sci. & Eng., Florida Univ., Gainesville, FL, USA
fYear :
1989
fDate :
11-13 Apr 1989
Firstpage :
207
Lastpage :
209
Abstract :
The activation energy of electromigration for ionized-cluster-beam-deposited aluminum films on 7000-Å-thick SiO 2 was found to be 1.1 eV compared to 0.5 eV, for conventionally deposited aluminum films. Aluminum films on oxide-free silicon did not show any hole formation or resistance increase during DC stressing
Keywords :
aluminium; electromigration; metallic thin films; metallisation; vapour deposited coatings; Al-SiO2; DC stressing; SiO2; activation energy; electromigration; ionised cluster beam deposition; Aluminum; Electromigration; Ion beams; Metallization; Particle beams; Semiconductor films; Silicon; Strips; Substrates; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
Conference_Location :
Phoenix, AZ
Type :
conf
DOI :
10.1109/RELPHY.1989.36346
Filename :
36346
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2345126
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