High-K, Pb-free dielectric compatible with Ag or Cu electrodes

Author

Burn, Ian

Author_Institution

Ferro Electron. Mater. Syst., Ferro Corp., South Plainfield, NJ, USA

fYear

2002

fDate

2002

Firstpage

370

Lastpage

374

Abstract

There is a real need for dielectrics with high dielectric constant (K) that can be used for the integration of bypass capacitors within circuit boards. The present paper describes a Pb-free dielectric based on barium titanate that provides K > 5000 when co-fired with either Ag or Cu conductors. The dielectric powder is made by chemical precipitation, has sub-micron particle size, a narrow size distribution, and consists Of clusters of nanosize crystallites. Dependence of K on firing conditions is discussed as well as the steps taken to ensure high reliability (HALT)

Keywords

barium compounds; conductors (electric); copper; dielectric materials; electrodes; integrated circuit technology; packaging; precipitation (physical chemistry); printed circuits; silver; sintering; thick film capacitors; Ag; Ag conductors; Ag electrodes; BaTiO₃; Cu; Cu conductors; Cu electrodes; DC bias; K above 5000; bypass capacitors; capacitors; chemical precipitation; circuit board; dielectric powder; firing; high K; nanosize crystallites; sintering; stability; submicron particle size; Barium; Capacitors; Chemicals; Conductors; Electrodes; High K dielectric materials; High-K gate dielectrics; Powders; Printed circuits; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Packaging Materials, 2002. Proceedings. 2002 8th International Symposium on

Conference_Location

Stone Mountain, GA

Print_ISBN

0-7803-7434-7

Type

conf

DOI

10.1109/ISAPM.2002.990414

Filename

990414