Title :
Design and applications of ferroelectric nonvolatile SRAM and flip-flop with unlimited read/program cycles and stable recall
Author :
Masui, Shoichi ; Yokozeki, Wataru ; Oura, Michiya ; Ninomiya, Tsuzumi ; Mukaida, Kenji ; Takayama, Yoshihisa ; Teramoto, Toshiyuki
Author_Institution :
Fujitsu Labs. Ltd., Tokyo, Japan
Abstract :
Circuit techniques to realize unlimited program cycle operation in ferroelectric nonvolatile (NV) SRAM have been developed with conventional ferroelectric materials. Program operation is separated into volatile write operation without polarization change and nonvolatile store operation with polarization change. Biasing of the memory cell is optimized to meet reliability requirements. The developed circuit principle is extended to implement a low-power nonvolatile flip-flop applicable to long communication range radio frequency identification tag LSIs.
Keywords :
SRAM chips; ferroelectric storage; flip-flops; low-power electronics; FeRAM; ferroelectric nonvolatile SRAM; long communication range RF identification tag LSI; low-power nonvolatile flip-flop; nonvolatile store operation; polarization change; stable SRAM recall; unlimited read/program cycles; volatile write operation; CMOS technology; Capacitors; Circuits; Ferroelectric films; Ferroelectric materials; Flip-flops; Nonvolatile memory; Polarization; Random access memory; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 2003. Proceedings of the IEEE 2003
Print_ISBN :
0-7803-7842-3
DOI :
10.1109/CICC.2003.1249428
