Title :
High power SiC-devices. New result and prospects
Author :
Lebedev, A.A. ; Chelnokov, V.E.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Russian Acad. of Sci., St Petersburg, Russia
Abstract :
In this work, theoretical analysis is given of SiC parameters which are important for electronic device production. Also, a comparative description of the different technological methods used for SiC growth is given. For substrate growth, the Lely method and modified Lely method are examined; for n-type epilayer growth, sublimation epitaxy (SE), container free liquid phase epitaxy (CFLPE), and chemical vapour deposition (CVD) are compared; for p-n junction production, SE, CFLPE, CVD, Al implantation (ID) and boron diffusion are compared; and for mesa structure formation, plasma-ion etching is examined
Keywords :
chemical vapour deposition; ion implantation; liquid phase epitaxial growth; p-n junctions; power semiconductor devices; semiconductor growth; silicon compounds; sputter etching; sublimation; vapour phase epitaxial growth; wide band gap semiconductors; Al implantation; CFLPE; CVD; Lely method; SiC; SiC growth; SiC parameters; SiC:Al; SiC:B; boron diffusion; chemical vapour deposition; container free liquid phase epitaxy; electronic device production; mesa structure formation; modified Lely method; n-type epilayer growth; p-n junction production; plasma-ion etching; power SiC-devices; sublimation epitaxy; substrate growth; Boron; Chemical products; Chemical technology; Chemical vapor deposition; Containers; Epitaxial growth; P-n junctions; Production; Silicon carbide; Substrates;
Conference_Titel :
High-Temperature Electronic Materials, Devices and Sensors Conference, 1998
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-4437-5
DOI :
10.1109/HTEMDS.1998.730639
