Title :
Accurate determination of the main parameters from Vt(V b) curves of fully-depleted SOI devices
Author :
Toffoli, A. ; Pelloie, J.L. ; Faynot, O. ; Raynaud, C. ; Giffard, B. ; Hartmann, J.
Author_Institution :
LETI, CEA, Centre d´´Etudes Nucleaires, de Grenoble, France
Abstract :
This paper describes a simple and accurate method to extract the main technological parameters: buried oxide thickness, silicon film thickness and doping level which are used to design fully-depleted SOI devices. Both enhancement-mode and accumulation-mode devices are measured for different silicon thicknesses from 200 to 500 Å, the parameters are extracted from the variation of the front threshold voltage with the back gate bias using the corresponding analytical models
Keywords :
MOS integrated circuits; MOSFET; integrated circuit measurement; silicon-on-insulator; 200 to 500 A; Si; Si film thickness; accumulation-mode; back gate bias; buried oxide thickness; doping level; enhancement-mode; front threshold voltage; fully-depleted SOI devices; technological parameters; Analytical models; Capacitance; Doping; Equations; Low voltage; MOSFET circuits; Semiconductor films; Silicon; Thickness measurement; Threshold voltage;
Conference_Titel :
Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on
Conference_Location :
Nara
Print_ISBN :
0-7803-2065-4
DOI :
10.1109/ICMTS.1995.513948
