Title :
Modified transmission line pulse system and transistor test structures for the study of ESD
Author :
Ashton, Robert A.
Author_Institution :
AT&T Bell Labs., Orlando, FL, USA
Abstract :
A modified Transmission Line Pulsing System for characterizing transistors under high currents for ESD performance prediction and understanding is presented which can both stress devices and measure damage. Guidelines for transistor test structure design for use with the system are presented and demonstrated for PMOS transistors
Keywords :
MOSFET; electrostatic discharge; semiconductor device testing; transmission lines; ESD; PMOS transistors; damage; device stress; transistor test structures; transmission line pulse system; Circuit testing; Electrostatic discharge; Power transmission lines; Probes; Pulse measurements; Stress; System testing; Transmission line measurements; Transmission lines; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on
Conference_Location :
Nara
Print_ISBN :
0-7803-2065-4
DOI :
10.1109/ICMTS.1995.513959
