DocumentCode
2347154
Title
Long term behavior of passive components for high temperature applications-an update
Author
Grzybowski, Richard R.
Author_Institution
United Technol. Res. Center, East Hartford, CT, USA
fYear
1998
fDate
22-27 Feb 1998
Firstpage
172
Lastpage
179
Abstract
Advances in SOI IC technology and the development of wide band gap semiconductors such as SiC are enabling practical deployment of high temperature electronics. While ICs are key to the realization of complete high temperature electronic systems, passive components including resistors, capacitors, magnetics and crystals are also required. This paper presents a representative cross-section of high temperature passive component characterization data with an emphasis on long term drift behavior. The goal of this study was to accumulate of the order of 5000 hours of long term parametric drift data at 200°C on a large variety of carefully selected, commercially available passive component technologies. Device types represented include both small signal and power resistors and capacitors, and some results obtained from a study of crystals for use in oscillators designed to operate in extended temperature applications from -55°C to 200°C. Specific problems encountered with the use of these devices in harsh environments are discussed for each family of components
Keywords
capacitors; crystal oscillators; electron device testing; environmental degradation; high-temperature electronics; reliability; resistors; thermal analysis; thermal stresses; -55 to 200 C; 5000 hr; SOI IC technology; SiC wide band gap semiconductor; capacitors; crystal oscillators; crystals; extended temperature applications; harsh environments; high temperature applications; high temperature electronic systems; high temperature electronics; high temperature passive component characterization; long term drift behavior; long term parametric drift data; magnetics; passive component technology; passive components; power capacitors; power resistors; resistors; small signal capacitors; small signal resistors; wide band gap semiconductors; Aerospace electronics; Capacitors; Integrated circuit technology; Military aircraft; Nuclear electronics; Paramagnetic resonance; Resistors; Silicon on insulator technology; Temperature dependence; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
High-Temperature Electronic Materials, Devices and Sensors Conference, 1998
Conference_Location
San Diego, CA
Print_ISBN
0-7803-4437-5
Type
conf
DOI
10.1109/HTEMDS.1998.730694
Filename
730694
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