Determination of solid solubility limit of In and Sb in Si using bonded silicon-on-insulator (SOI) substrate

Author

Sato, A. ; Suzuki, K. ; Horie, H. ; Sugii, T.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1995

fDate

22-25 Mar 1995

Firstpage

259

Lastpage

263

Abstract

An SOI substrate enables us to obtain high, even distribution of impurity concentration in ion implantation with subsequent high-temperature annealing. We evaluated the solid solubility limit of In and Sb in Si by Hall measurement. We found that the solid solubility of In was constant at 1.5×10¹⁸ cm^-3 between 800°C and 1100°C, while that of Sb varied from 7×10¹⁹ cm^-3 at 800°C to 1.2×10²⁰ cm^-3 at 1100°C, both of which were higher than previously reported values

Keywords

Hall effect; annealing; antimony; elemental semiconductors; indium; ion implantation; semiconductor doping; silicon; silicon-on-insulator; solid solubility; substrates; wafer bonding; 800 to 1100 C; Hall measurement; Si:In; Si:Sb; bonded SOI substrate; high-temperature annealing; impurity concentration; ion implantation; solid solubility; Annealing; Bonding; Conductivity; Doping profiles; Electrical resistance measurement; Impurities; Ion implantation; Silicon on insulator technology; Solids; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on

Conference_Location

Nara

Print_ISBN

0-7803-2065-4

Type

conf

DOI

10.1109/ICMTS.1995.513984

Filename

513984