DocumentCode :
2347261
Title :
Advances in electronic packaging technologies to temperatures as high as 500°C
Author :
Grzybowski, Richard R.
Author_Institution :
United Technol. Res. Center, East Hartford, CT, USA
fYear :
1998
fDate :
22-27 Feb 1998
Firstpage :
207
Lastpage :
215
Abstract :
Advances in SOI IC technology and development of wide band gap semiconductors such as SiC are enabling practical deployment of high temperature electronics. While ICs are key to the realization of complete high temperature electronic systems, passive components, including resistors, capacitors, magnetics and crystals, are also required. Electronic components from all of these categories exist to varying degrees for temperatures up to 500°C. However, one of the greatest hindrances to making individual components more reliable is their packaging. Similarly, one of the greatest hindrances to integrating individual components together into a system is the understanding of harsh environment packaging techniques and materials selection. This paper addresses electronics packaging for harsh environment applications for a variety of packaging levels. We begin by looking at common failure mechanisms associated with packaging microcircuits at the IC die level as well as packaging means for individual passive components. With these failure mechanisms identified, we consider alternate materials selections and fabrication approaches that permit electronic systems to be packaged for much higher temperature operating environments than are generally possible with traditional methods. We also examine packaging options at the PWB level, including high temperature substrate materials, interconnect metallization, solders and braze materials
Keywords :
brazing; capacitors; failure analysis; high-temperature electronics; integrated circuit interconnections; integrated circuit metallisation; integrated circuit packaging; printed circuits; resistors; soldering; thermal analysis; thermal management (packaging); 500 C; IC die level packaging; PWB level packaging; SOI IC technology; Si-SiO2; SiC; SiC wide band gap semiconductors; braze materials; capacitors; component integration; component packaging; crystals; electronic components; electronic packaging technologies; failure mechanisms; harsh environment packaging selection; harsh environment packaging techniques; high temperature electronic packaging technologies; high temperature electronic systems; high temperature electronics; high temperature substrate materials; interconnect metallization; magnetic components; operating environments; operating temperature; packaging level; passive component packaging; passive components; resistors; solders; Capacitors; Electronics packaging; Failure analysis; Inorganic materials; Integrated circuit packaging; Magnetics; Resistors; Silicon carbide; Temperature; Wide band gap semiconductors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High-Temperature Electronic Materials, Devices and Sensors Conference, 1998
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-4437-5
Type :
conf
DOI :
10.1109/HTEMDS.1998.730699
Filename :
730699
Link To Document :
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