Title :
Control of influence of Auger recombination on the threshold in asymmetric quantum-well lasers
Author :
Kononenko, Valerii K. ; Ushakov, Dmitrii V. ; Sukhoivanov, Igor A. ; Mashoshina, Olga V.
Author_Institution :
Stepanov Inst. of Phys., Minsk, Belarus
Abstract :
In the work, general description of the Auger recombination (AR) processes in quantum-well (QW) heterostructure is presented and new conception of weakening the temperature sensitivity of the threshold in asymmetric QW heterolasers is suggested. Numerical simulation is approved on an example of the GaInAs-GaInAsP laser system.
Keywords :
Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; Auger recombination; GaInAs-GaInAsP; GaInAs-GaInAsP laser; QW heterolasers; asymmetric quantum-well lasers; Diode lasers; Effective mass; Electron optics; Electronic mail; Optical control; Optical sensors; Quantum well lasers; Radiative recombination; Spontaneous emission; Temperature dependence;
Conference_Titel :
Laser and Fiber-Optical Networks Modeling, 2004. Proceedings of LFNM 2004. 6th International Conference on
Print_ISBN :
0-7803-8429-6
DOI :
10.1109/LFNM.2004.1382436
