Title :
HIGH POWER GaAs STATIC INDUCTION TRANSISTOR
Author :
Hadizad, P. ; Baik, M. ; Kanjamala, P.A. ; Gundersen, M.A.
Keywords :
Breakdown voltage; FETs; Frequency; Gallium arsenide; Insulated gate bipolar transistors; P-i-n diodes; Power MOSFET; Rectifiers; Silicon; Thyristors;
Conference_Titel :
Pulsed Power Conference, 1993. Digest of Technical Papers., Ninth IEEE International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-1415-8
DOI :
10.1109/PPC.1993.514002
