Title :
Transient gain-spectra and bandgap-renormalization dynamics in ultrashort optical pulse excited InGaAs-InGaAsP multi-quantum-well laser structure
Author :
Wang, Jian ; Adler, Frank ; Schweizer, Heinz
Author_Institution :
4. Phys. Inst., Stuttgart Univ., Germany
Abstract :
Time-development of transient optical net gain spectra of InGaAs-InGaAsP MQW laser structure after ultrashort pulse excitation was measured. With theoretical simulation, the dynamics of carrier density, carrier temperature and bandgap renormalization and their influences on transient gain were investigated.
Keywords :
III-V semiconductors; carrier density; energy gap; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; quantum well lasers; time resolved spectra; transients; InGaAs-InGaAsP; InGaAs-InGaAsP MQW laser structure; InGaAs-InGaAsP multi-quantum-well laser structure; bandgap renormalization; bandgap-renormalization dynamics; carrier density; carrier temperature; theoretical simulation; transient gain; transient gain-spectra; transient optical net gain spectra; ultrashort optical pulse excitation; ultrashort pulse excitation; Charge carrier density; Gain measurement; Laser excitation; Optical pulses; Optical pumping; Pump lasers; Semiconductor lasers; Stimulated emission; Temperature; Ultrafast optics;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.558780
