Title :
InAs/AlSb dual-gate HFETs
Author :
Bolognesi, C.R. ; Dvorak, M.W. ; Chow, D.H.
Author_Institution :
Dept. of Phys., Simon Fraser Univ., Burnaby, BC, Canada
Abstract :
Summary form only given. Dual-gate FET structures have traditionally been very effective in minimizing short-channel effects by reducing the output conductance and by increasing the maximum allowable drain bias in more conventional material systems. In this paper we report the first implementation of InAs/AlSb dual-gate HFETs (DG-HFETs) which consist of two electrically distinct 1 /spl mu/m gate fingers with an intergate separation L/sub IG/=1 /spl mu/m, inserted between the source and drain ohmic contacts. The physical principles behind the InAs/AlSb DG-HFET device operation are discussed. DG-FETs have found widespread RF applications such as up/down-converter, gain control, and phase shifting circuits. In order to provide a proof-of-concept for the functionality of the present devices, we have successfully implemented a simple mixer circuit based on the present InAs/AlSb DG-HFETs. We believe this is the first realization of a functional circuit based on InAs/AlSb HFETs. The potential millimeter-wave performance of InAs/AlSb DG-HFETs is excellent and is discussed in this paper.
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; millimetre wave field effect transistors; millimetre wave mixers; 1 micron; EHF; InAs-AlSb; MM-wave device; RF applications; dual-gate HFETs; kink-free drain characteristics; millimeter-wave performance; mixer circuit; Circuits; Electron mobility; HEMTs; Laboratories; MODFETs; Physics; Temperature; Transconductance; Virtual manufacturing; Voltage;
Conference_Titel :
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-3358-6
DOI :
10.1109/DRC.1996.546345