• DocumentCode
    2349294
  • Title

    Road to Vmin=0.4V LSIs with least-variability FDSOI and back-bias control

  • Author

    Sugii, Nobuyuki

  • Author_Institution
    Low-power Electron. Assoc. & Project (LEAP), Japan
  • fYear
    2011
  • fDate
    3-6 Oct. 2011
  • Firstpage
    1
  • Lastpage
    19
  • Abstract
    Ultra low-power CMOS should be operated under Emin condition in principle. Compromise between E and speed is done with adaptive Vdd and Vb control. Reducing RDF variability and back-bias control is a key requirement for ULV-operation CMOS. SOTB is the suitable device structure for this purpose. From ULP application viewpoint, ULP wireless communication and power source are crucial issues as well as ULV LSIs. “Perpetuum Mobile” microcomputer awaits vast new application field.
  • Keywords
    CMOS integrated circuits; large scale integration; low-power electronics; silicon-on-insulator; FDSOI; LSI; Perpetuum Mobile microcomputer; RDF variability; SOTB; ULP wireless communication; back-bias control; power source; silicon-on-thin box; ultra low-power CMOS; voltage 0.4 V; Low power electronics; Noise; Random access memory; Reliability engineering; Roads; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference (SOI), 2011 IEEE International
  • Conference_Location
    Tempe, AZ
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-61284-761-0
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2011.6081686
  • Filename
    6081686
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2349294