Title :
Analytical model for the surface potential and electrical field distribution of BPSOI devices
Author :
Fang, Miao ; Chen, Jun-Nin ; Ke, Dao-ming ; Gao, Shan
Author_Institution :
Anhui Univ., Hefei
Abstract :
A 2-D analytical model for the surface potential and electrical field distribution along the drift region of buried partial silicon on insulator (BPSOI) is presented. Based on the solution of the 2-D Poisson´s equation, the model gives the influence on the surface electrical field of the drain bias and structure parameters such as the length of the poly gate-field-plate, the length of the buried layer, and the substrate doping concentration. The analytical results are well supported by the simulation results obtained by Medici.
Keywords :
Poisson equation; electric fields; semiconductor device models; semiconductor doping; silicon-on-insulator; surface potential; 2D Poisson equation; BPSOI devices; analytical model; buried partial silicon on insulator; doping concentration; electrical field distribution; poly gate-field-plate; surface potential; Analytical models; Dielectric substrates; Electric potential; Poisson equations; Position measurement; Q measurement; Semiconductor device doping; Semiconductor process modeling; Silicon on insulator technology; Voltage; BPSOI; surface electrical field; surface potential;
Conference_Titel :
EUROCON, 2007. The International Conference on "Computer as a Tool"
Conference_Location :
Warsaw
Print_ISBN :
978-1-4244-0813-9
Electronic_ISBN :
978-1-4244-0813-9
DOI :
10.1109/EURCON.2007.4400348