DocumentCode :
2349431
Title :
An analytical a-Si:H TFT DC/ capacitance model using an effective temperature approach for deriving a switching time model
Author :
Chen, S.S. ; Kuo, J.B.
Author_Institution :
National Taiwan University
fYear :
1994
fDate :
1994
Keywords :
Amorphous materials; Amorphous silicon; Analytical models; Capacitance; Circuits; Inverters; Tail; Temperature; Thin film transistors; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.863885
Filename :
863885
Link To Document :
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