DocumentCode :
234957
Title :
Modeling, design, and demonstration of low-temperature Cu interconnections to ultra-thin glass interposers at 20 μm pitch
Author :
Tao Wang ; Smet, Vanessa ; Kobayashi, Masato ; Sundaram, Venky ; Raj, P. Markondeya ; Tummala, Rao
Author_Institution :
3D Syst. Packaging Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2014
fDate :
27-30 May 2014
Firstpage :
284
Lastpage :
289
Abstract :
This paper reports the first design and demonstration of a manufacturable 20 μm pitch Cu interconnection technology to ultra-thin glass interposers. Bonding is accomplished at temperatures below 200 °C without the need for solders. Manufacturability challenges such as substrate warpage, bump noncoplanarity and assembly throughput with low bonding times are addressed with this technology. The modeling and experimental results indicate that the ultra-fine pitch Cu interconnection offsets more than 3 μm non-coplanarity. Bonding interfaces were characterized to show that metallurgical bonding microstructure is formed even with a bonding time of 5 seconds, with superior electrical properties. A mechanism for low-temperature metallurgical bonding is proposed based on the characterization results.
Keywords :
bonding processes; copper; glass; integrated circuit interconnections; Cu; assembly throughput; bonding interfaces; bump noncoplanarity; electrical properties; low-temperature Cu interconnections; metallurgical bonding microstructure; substrate warpage; time 5 s; ultra-fine pitch Cu interconnection; ultra-thin glass interposers; Assembly; Bonding; Glass; Gold; Reliability; Stress; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2014 IEEE 64th
Conference_Location :
Orlando, FL
Type :
conf
DOI :
10.1109/ECTC.2014.6897300
Filename :
6897300
Link To Document :
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