Title :
Integration of gallium nitride and silicon: From devices to Diamond
Author_Institution :
Texas State Univ., San Marcos, TX, USA
Abstract :
A collection of slides from the author´s conference presentation is given. The following topics are discussed: silicon as a substrate for GaN epitaxy; N-Polar GaN HEMT; and GaN/Diamond wafer process.
Keywords :
diamond; epitaxial growth; gallium compounds; high electron mobility transistors; silicon; substrates; N-polar HEMT; diamond; gallium nitride epitaxy; silicon; substrate; wafer process; Diamond-like carbon; Epitaxial growth; Gallium nitride; Indium gallium arsenide; Silicon; Silicon carbide; Thermal conductivity;
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-61284-761-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2011.6081705
