DocumentCode :
2349706
Title :
A Novel SRAM-Cell Based Input Vector Monitoring Concurrent BIST Architecture
Author :
Voyiatzis, I. ; Efstathiou, C. ; Antonopoulou, H.
Author_Institution :
Dept. of Inf., Technol. Educ. Inst. of Athens, Athens, Greece
fYear :
2011
fDate :
23-27 May 2011
Firstpage :
206
Lastpage :
206
Abstract :
Input vector monitoring concurrent Built-In Self-Test (BIST) schemes can circumvent problems appearing separately in on-line and off-line BIST techniques. The concurrent test latency of an input vector monitoring concurrent BIST scheme is the time required in order to complete the concurrent test. In this paper a novel input vector monitoring concurrent BIST scheme is presented. The proposed BIST scheme is shown to have lower hardware overhead for the same values of the concurrent test latency compared to previously proposed schemes.
Keywords :
SRAM chips; built-in self test; circuit testing; CUT; SRAM-cell; circuit under test; input vector monitoring concurrent BIST architecture; input vector monitoring concurrent built-in self test technique; Built-in self-test; Computer architecture; Decoding; Flip-flops; Logic gates; Monitoring; Radiation detectors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Symposium (ETS), 2011 16th IEEE European
Conference_Location :
Trondheim
ISSN :
1530-1877
Print_ISBN :
978-1-4577-0483-3
Electronic_ISBN :
1530-1877
Type :
conf
DOI :
10.1109/ETS.2011.60
Filename :
5957952
Link To Document :
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