Title :
Joint development of a topography simulator at National Semiconductor Corporation and Arizona State University
Author :
Stippel, H. ; Liao, H. ; Reddy, K. ; Saha, S.
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
Abstract :
A joint effort between Arizona State University, Tempe, and National Semiconductor Corporation to bring academic research work from a University to the every-day´s work at a real production line has been carried out. Ti and TiN sputter deposition processes-collimated as well as uncollimated were studied. By succeeding and exceeding the initial expectations we could demonstrate that theoretical work can be definitely of great value to practical applications. A product has been developed which allows the process engineer a fast and accurate study of the results of changes in various process parameters as well as to monitor the current process
Keywords :
digital simulation; electronic engineering computing; graphical user interfaces; integrated circuit metallisation; semiconductor process modelling; sputter deposition; surface topography; titanium; titanium compounds; Arizona State University; GUI; National Semiconductor Corporation; collimated type; joint development; process parameters; production line environment; sputter deposition processes; topography simulator; uncollimated type; Collimators; Computational modeling; Graphical user interfaces; Metallization; Production; Solid state circuits; Sputtering; Surface topography; Temperature; Tin;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1995., Proceedings of the Eleventh Biennial
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-2596-6
DOI :
10.1109/UGIM.1995.514137
