DocumentCode :
2351192
Title :
Analysis of parasitic resistance in double gate FinFETs with different fin lengths
Author :
Yang, X. ; Maitra, K. ; Yeh, C. ; Zeitzoff, P. ; Raymond, M. ; Kulkarni, P. ; Wang, M. ; Yamashita, T. ; Basker, V.S. ; Standaert, T.E. ; Samavedam, S. ; Bu, H. ; Miller, R.J.
Author_Institution :
GLOBALFOUNDRIES Inc., Albany, NY, USA
fYear :
2011
fDate :
3-6 Oct. 2011
Firstpage :
1
Lastpage :
2
Abstract :
A significant increase in parasitic resistance (RPARA) fluctuation is observed when S/D length is getting smaller than the characteristic length (LTRANS). Resistance change evaluated on double gate finFETs with various fin lengths shows an excellent agreement between the experimental data and the analytical model. Further RPARA fluctuation improvement can be realized by optimizing the LTRANS.
Keywords :
MOSFET; S-D length; double gate FinFET; fin length; parasitic resistance fluctuation analysis; Analytical models; Electrical resistance measurement; FinFETs; Fluctuations; Logic gates; Resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Conference_Location :
Tempe, AZ
ISSN :
1078-621X
Print_ISBN :
978-1-61284-761-0
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2011.6081799
Filename :
6081799
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2351192
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