DocumentCode
235133
Title
Development of the technology to control the spatial distribution of plasma using double ICP coil
Author
Sakuishi, Toshiyuki ; Murayama, Takahide ; Morikawa, Yasuhiro ; Suu, Koukou
Author_Institution
ULVAC Inc., Susono, Japan
fYear
2014
fDate
27-30 May 2014
Firstpage
846
Lastpage
849
Abstract
With the shrink of TSV diameter, smoothness of side wall and taper angle control become more and more important. We have developed scallop free etching by direct etching method. Direct etching method is continuous, not cyclical etching and deposition. Scallop does not occur in principle. Double ICP antenna newly developed has good controllability of side wall taper angle.
Keywords
antennas in plasma; plasma deposition; plasma devices; sputter etching; ICP antenna; TSV diameter; cyclical etching; deposition; direct etching method; double ICP coil; scallop free etching; taper angle control; Antennas; Etching; Iterative closest point algorithm; Plasmas; Reliability; Silicon; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2014 IEEE 64th
Conference_Location
Orlando, FL
Type
conf
DOI
10.1109/ECTC.2014.6897384
Filename
6897384
Link To Document