Title :
Determination of key material parameters in SOI wafers by using a contactless optical technique
Author :
Chang, Yun-Shan ; Li, Sheng S.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
Presents a unique contactless dual-beam optical technique for determining several key material parameters such as excess carrier lifetimes in the top Si film and substrate, interface recombination velocities, and the thickness of top Si film and buried oxide in SIMOX wafers. An S-polarized reflectance technique is employed to determine the thickness of top Si film and buried oxide of SIMOX wafers using the blue and red laser beams (CdHe and HeNe lasers). In addition, a dual beam optical modulation (DBOM) technique is used to determine the excess carrier lifetimes and interface recombination velocities in the SOI wafers
Keywords :
SIMOX; carrier lifetime; electron-hole recombination; optical modulation; reflectivity; silicon-on-insulator; thickness measurement; S-polarized reflectance technique; SIMOX wafers; Si; buried oxide; contactless dual-beam optical technique; dual beam optical modulation; excess carrier lifetimes; interface recombination velocities; material parameters; Charge carrier lifetime; Contacts; Laser beams; Laser excitation; Laser modes; Laser theory; Optical films; Optical materials; Semiconductor films; Substrates;
Conference_Titel :
SOI Conference, 1994 Proceedings., 1994 IEEE International
Conference_Location :
Nantucket, MA
Print_ISBN :
0-7803-2406-4
DOI :
10.1109/SOI.1994.514224
