Title :
Effect of anneal temperature on Si/buried oxide interface roughness of SIMOX
Author :
Jacobs, C. ; Genis, A. ; Allen, L.P. ; Roitman, P.
Author_Institution :
Ibis Technol. Corp., Danvers, MA, USA
Abstract :
Examination of the interface roughness between the device silicon layer and the buried oxide of the SOI structure is an active area of materials research and development. In this work, we have used atomic force microscopy (AFM) to measure the interface roughness of SIMOX SOI substrates as a function of anneal parameters. This study has shown that the silicon/buried oxide interface roughness is a strong function of the post implant annealing temperature
Keywords :
SIMOX; annealing; atomic force microscopy; interface structure; SIMOX; Si; anneal temperature; atomic force microscopy; buried oxide; interface roughness; post implant annealing; Annealing; Argon; Atomic force microscopy; Atomic measurements; Force measurement; Implants; NIST; Silicon on insulator technology; Substrates; Temperature;
Conference_Titel :
SOI Conference, 1994 Proceedings., 1994 IEEE International
Conference_Location :
Nantucket, MA
Print_ISBN :
0-7803-2406-4
DOI :
10.1109/SOI.1994.514229
