Title :
300 GHz InP HBT amplifier with 10 mW output power
Author :
Yu, H.G. ; Choi, S.H. ; Jeon, Sanggeun ; Kim, Marn-Go
Author_Institution :
Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
Abstract :
A high-power terahertz solid-state amplifier fabricated using 0.25 μm InP heterojunction bipolar transistor (HBT) technology is reported. This amplifier utilies a novel defective-ground four-way balun to combine differential amplifier chains for a total output device periphery of 40 μm. A significant amount of power of ~10 mW is obtained at 305 GHz with better than 20 dB small-signal gain.
Keywords :
III-V semiconductors; differential amplifiers; heterojunction bipolar transistors; indium compounds; submillimetre wave amplifiers; terahertz wave devices; HBT amplifier; HBT technology; InP; defective-ground four-way balun; differential amplifier chains; frequency 300 GHz; frequency 305 GHz; high-power terahertz solid-state amplifier; power 10 mW; size 0.25 mum; size 40 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2013.3288
