Title :
The series connection of IGBTs with optimised voltage sharing in the switching transient
Author :
Palmer, Patrick R. ; Githiari, Anthony N.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
This paper reviews the reasons that make series operation of IGBTs attractive and challenging. Then, a new approach which uses the IGBT´s gate controlled active regime in place of large series sharing snubbers is proposed. This technique is shown to improve the voltage sharing during switching transients and may lead to more compact and efficient high voltage power modules
Keywords :
insulated gate bipolar transistors; power semiconductor switches; power system transients; switching circuits; transients; gate controlled active regime; high voltage power modules; large series sharing snubbers; optimised voltage sharing; series connected IGBT; switching transient; Circuits; Frequency; Insulated gate bipolar transistors; MOSFETs; Medical simulation; Multichip modules; Snubbers; Switching loss; Temperature; Voltage control;
Conference_Titel :
Power Electronics Specialists Conference, 1995. PESC '95 Record., 26th Annual IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-2730-6
DOI :
10.1109/PESC.1995.474790
