Pt-silicide source and drain SOI-MOSFET operating in bi-channel modes

Recently, MOSFETs with metal/silicon contacts at source and drain have been attracting a great deal of attention. The Schottky barrier nature of the source contact offers the field emission of electrons from the source to the channel, which offers potential application to very small MOSFETs. In fact, this type of MOSFET has been demonstrated using bulk Si devices. From the viewpoint of suppression of floating body effects in an n-channel SOI-MOSFET, we have shown that the use of Schottky contacts at the source and drain is very effective and have demonstrated the successful operation of an n-channel SOI-MOSFET using Er-silicide Schottky contacts (Nishisaka and Asano, 1998). In this work, we report for the first time the complementary operation of an SOI-MOSFET with Pt-silicide source/drain contacts. It is shown that the single MOSFET can operate at room temperature in both n- and p-channel modes, so that complementary circuits can be realised without any control of the conduction-type of the silicon active layer.