Title :
P1J-5 Spurious Modes in Aluminum Nitride Film Resonators
Author :
Gong, Xun ; Duan, Jie ; Shang, Xiaoli ; Xiong, Jun ; De Zhang
Author_Institution :
Inst. of Acoust., Nanjing Univ.
Abstract :
In this paper, we use a hybrid method which combines the traditional guided waves concept and FEM (finite element method) to analyze the spurious modes of aluminum nitride (AlN) film with electrodes. First, the guided wave modes in plated area are gotten by 1-D FEM. The vibration of the film resonator is a superposition of all the guided modes. We find that for AlN film resonator, a thickness-stretch mode resonator, there are three families of spurious modes, extension, thickness-stretch and thickness-shear. The spectrum of spurious modes is calculated and the influence of the spurious modes is discussed
Keywords :
III-V semiconductors; acoustic resonators; aluminium compounds; finite element analysis; lattice dynamics; thin films; wide band gap semiconductors; 1D FEM; AlN; aluminum nitride film resonators; extension mode; film resonator vibration; finite element method; guided waves concept; resonator spurious modes; thickness-shear mode; thickness-stretch mode resonator; Acoustical engineering; Aluminum nitride; Electrodes; Film bulk acoustic resonators; Finite element methods; Frequency; Mobile communication; Mobile handsets; Piezoelectric films; Resonance;
Conference_Titel :
Ultrasonics Symposium, 2006. IEEE
Conference_Location :
Vancouver, BC
Print_ISBN :
1-4244-0201-8
Electronic_ISBN :
1051-0117
DOI :
10.1109/ULTSYM.2006.370
