Title :
New 500V output device structures for thin silicon layer on silicon dioxide film
Author :
Nakagawa, A. ; Yasuhara, N. ; Baba, Y.
Author_Institution :
Toshiba Research & Development Center
Keywords :
Dielectric devices; Dielectric substrates; Dielectric thin films; Etching; Filling; Oxidation; Power integrated circuits; Semiconductor films; Silicon compounds; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
DOI :
10.1109/ISPSD.1990.991067
