DocumentCode :
2354399
Title :
A two-dimensional analytical model for the output I-V characteristics of the static induction transistor (SIT)
Author :
Strollo, Antonio G M ; Spirito, Paolo
Author_Institution :
University of Naples
fYear :
1990
fDate :
1990
Firstpage :
196
Lastpage :
203
Keywords :
Analytical models; Doping profiles; Electron mobility; Implants; Logic devices; Numerical simulation; Semiconductor process modeling; Shape; Solid modeling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
ISSN :
1063-6854
Type :
conf
DOI :
10.1109/ISPSD.1990.991083
Filename :
991083
Link To Document :
بازگشت