DocumentCode
2354848
Title
Highly reliable 7 W operation of 644 nm wavelength laser diode arrays with top-hat near field pattern
Author
Imanishi, Daisuke ; Sato, Yoshifumi ; Naganuma, Kaori ; Ito, Satoshi ; Hirata, Shoji
Author_Institution
Adv. Laser Technol. Dept., Sony Corp., Kanagawa, Japan
fYear
2004
fDate
25-25 Sept. 2004
Firstpage
49
Lastpage
50
Abstract
AlInP/GaInP 7 W laser arrays with a uniform intensity distribution and a low smile of 1 μm have been developed for a display system. The estimated lifetime exceeds 10000 hours under CW operation.
Keywords
III-V semiconductors; aluminium compounds; display devices; gallium compounds; indium compounds; optical projectors; semiconductor device reliability; semiconductor laser arrays; 644 nm; 7 W; AlInP-GaInP; AlInP/GaInP laser arrays; continuous-wave operation; display system; highly reliable laser arrays; laser diode arrays; laser projection; top-hat near field pattern; uniform intensity distribution; Bonding; Diode lasers; Displays; Fluctuations; Life estimation; Optical arrays; Power generation; Power lasers; Semiconductor laser arrays; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location
Matsue-shi
Print_ISBN
0-7803-8627-2
Type
conf
DOI
10.1109/ISLC.2004.1382749
Filename
1382749
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