Title :
Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers
Author :
Thompson, M.G. ; Marinelli, C. ; Chu, Y. ; Sellin, R.L. ; Penty, R.V. ; White, I.H. ; van der Poel, M. ; Birkedal, D. ; Hvam, J. ; Ustinov, V.M. ; Lämmlin, M. ; Bimberg, D.
Author_Institution :
Photonic Syst. Group, Cambridge Univ., UK
Abstract :
Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; optical saturable absorption; quantum confined Stark effect; quantum dot lasers; InGaAs; InGaAs quantum dot lasers; fast absorber recovery time; low absorber saturation power; mode-locking performance; monolithic mode-locked lasers; quantum dot saturable absorbers; weak quantum confined Stark effect; Absorption; Gallium arsenide; Indium gallium arsenide; Laser mode locking; Potential well; Quantum cascade lasers; Quantum dot lasers; Stark effect; US Department of Transportation; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
DOI :
10.1109/ISLC.2004.1382751
