DocumentCode
235536
Title
Effect of polymer liners in CNT based through silicon vias
Author
Kumari, Akanksha ; Majumder, Manoj Kumar ; Kaushik, B.K. ; Manhas, Sanjeev Kumar
Author_Institution
Dept. of Electron. & Commun. Eng., Indian Inst. of Technol. Roorkee, Roorkee, India
fYear
2014
fDate
27-30 May 2014
Firstpage
1921
Lastpage
1925
Abstract
Polymer liners have provided potentially attractive solutions over conventional silicon dioxide (SiO2) in singlewalled carbon nanotube (SWCNT) bundle based through silicon vias (TSVs). Using SiO2 and different polymer liners (such as BCB, PPC and polyimide), this paper analyzes the delay with and without crosstalk for different TSV heights and radius. It is observed that the crosstalk coupling is prominently influenced by the dielectric constant of the materials lying between the TSV and the Si substrate. For a SWCNT bundled TSV with higher aspect ratio, the crosstalk delay is reduced by 43.8%, 36.5% and 19.3% for BCB, PPC and polyimide, respectively, in comparison to conventional SiO2 liner.
Keywords
carbon nanotubes; crosstalk; delays; polymers; silicon compounds; three-dimensional integrated circuits; BCB; CNT based through silicon vias; PPC; SiO2; TSV heights; aspect ratio; crosstalk; crosstalk coupling; crosstalk delay; delay analysis; dielectric constant; polyimide; polymer liner effect; singlewalled carbon nanotube bundle; Capacitance; Crosstalk; Delays; Polymers; Silicon; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2014 IEEE 64th
Conference_Location
Orlando, FL
Type
conf
DOI
10.1109/ECTC.2014.6897564
Filename
6897564
Link To Document