• DocumentCode
    235536
  • Title

    Effect of polymer liners in CNT based through silicon vias

  • Author

    Kumari, Akanksha ; Majumder, Manoj Kumar ; Kaushik, B.K. ; Manhas, Sanjeev Kumar

  • Author_Institution
    Dept. of Electron. & Commun. Eng., Indian Inst. of Technol. Roorkee, Roorkee, India
  • fYear
    2014
  • fDate
    27-30 May 2014
  • Firstpage
    1921
  • Lastpage
    1925
  • Abstract
    Polymer liners have provided potentially attractive solutions over conventional silicon dioxide (SiO2) in singlewalled carbon nanotube (SWCNT) bundle based through silicon vias (TSVs). Using SiO2 and different polymer liners (such as BCB, PPC and polyimide), this paper analyzes the delay with and without crosstalk for different TSV heights and radius. It is observed that the crosstalk coupling is prominently influenced by the dielectric constant of the materials lying between the TSV and the Si substrate. For a SWCNT bundled TSV with higher aspect ratio, the crosstalk delay is reduced by 43.8%, 36.5% and 19.3% for BCB, PPC and polyimide, respectively, in comparison to conventional SiO2 liner.
  • Keywords
    carbon nanotubes; crosstalk; delays; polymers; silicon compounds; three-dimensional integrated circuits; BCB; CNT based through silicon vias; PPC; SiO2; TSV heights; aspect ratio; crosstalk; crosstalk coupling; crosstalk delay; delay analysis; dielectric constant; polyimide; polymer liner effect; singlewalled carbon nanotube bundle; Capacitance; Crosstalk; Delays; Polymers; Silicon; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2014 IEEE 64th
  • Conference_Location
    Orlando, FL
  • Type

    conf

  • DOI
    10.1109/ECTC.2014.6897564
  • Filename
    6897564