DocumentCode
2355508
Title
Structure dependence of temperature rise in semiconductor lasers
Author
Nomoto, E. ; Nakatsuka, S. ; Sato, H. ; Takahashi, N. ; Tsuchiya, T. ; Kitatani, T. ; Ouchi, K. ; Nakahara, K. ; Aoki, M.
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fYear
2004
fDate
25-25 Sept. 2004
Firstpage
105
Lastpage
106
Abstract
Temperature rise in buried-heterostructure laser was uniform along laser cavity, while that in ridge-waveguide laser was abnormally larger at facets due to thermally enhanced optical absorption, which can be suppressed by using a non-injection facet.
Keywords
laser cavity resonators; semiconductor lasers; thermo-optical effects; waveguide lasers; buried-heterostructure laser; laser cavity; noninjection facet; ridge-waveguide laser; semiconductor lasers; structure dependence; temperature rise; thermally enhanced optical absorption; Absorption; Artificial intelligence; Face detection; Heating; Laser feedback; Optical films; Power lasers; Semiconductor lasers; Temperature dependence; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location
Matsue-shi
Print_ISBN
0-7803-8627-2
Type
conf
DOI
10.1109/ISLC.2004.1382777
Filename
1382777
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