Title :
A novel dmos structure for 1. 5 μm rule Bi-CMOS process
Author :
Fujishima, Naoto ; Yano, Yukio ; Tsuchiya, Kazuhiro
Author_Institution :
Fuji Electric Corporate Research and Development, Ltd.
Keywords :
Analytical models; Capacitance; Electrodes; Epitaxial layers; Fabrication; Flowcharts; Implants; Lattices; MOSFETs; Threshold voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
DOI :
10.1109/ISPSD.1992.991237
