Title :
All solid-state Marx modulator with bipolar high-voltage fast narrow pulses output
Author :
Gao, Lan ; Liu, Kefu ; Qiu, Jian ; Wang, Dongdong
Author_Institution :
Inst. of Electr. Light Sources, Fudan Univ., Shanghai, China
Abstract :
A newly developed bipolar high-voltage modulator topology, based on fully integrated solid-state Marx generator circuit, is proposed for generating fast narrow pulses. The new circuit topology combines the advantages of conventional unipolar all-solid-state Marx modulator concepts, which takes advantage of the intensive use of power semiconductor switches, enables the use of typical half-bridge semiconductor structures. Magnetic ring transformers are used for isolating of charging circuit from high voltage pulse output, which simplified the isolation arrangement. The main factors which affect the rising and falling edge of the output pulses are discussed on the basis of simulations and experimental results. A laboratory prototype is composed of 8 stages and each stage is made of 800 V MOSFETs. The modulator operating at 2 kHz repetition rate gives 2 kV bipolar pulses, with 200 ns pulse width, 53 ns rise time, 70ns fall time and 500 ns relaxation time into a 50 Ω resistive load.
Keywords :
field effect transistor switches; high-voltage techniques; modulators; network topology; power semiconductor switches; power transformers; pulse generators; pulsed power supplies; MOSFET; bipolar pulses; circuit topology; fall time; frequency 2 kHz; half-bridge semiconductor structures; high-voltage modulator topology; magnetic ring transformers; power semiconductor switches; pulse generation; relaxation time; resistance 50 ohm; rise time; solid-state Marx modulator; time 200 ns; time 500 ns; time 53 ns; time 70 ns; voltage 2 kV; voltage 800 V; Capacitors; Discharges; Generators; Logic gates; MOSFETs; Modulation; Switches; Marx generator; bipolar pulses; rise and fall time; semiconductor devices;
Conference_Titel :
Power Modulator and High Voltage Conference (IPMHVC), 2010 IEEE International
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-7131-7
DOI :
10.1109/IPMHVC.2010.5958371