• DocumentCode
    235690
  • Title

    CMP of GaN using sulfate radicals generated by metal catalyst

  • Author

    Zou Chunli ; Pan Guoshun ; Xu Li ; Shi Xiaolei ; Yuyu Liu

  • Author_Institution
    State Key Lab. of Tribology, Tsinghua Univ., Shenzhen, China
  • fYear
    2014
  • fDate
    19-21 Nov. 2014
  • Firstpage
    242
  • Lastpage
    245
  • Abstract
    A method for preparing atomically smooth gallium nitride (GaN) surface with high material removal rate that involves chemical mechanical polishing with sulfate radical (SO4-) oxidizer and Fe2+ activator in slurry is presented. The results indicate that complexing agent with Fe2+ activator is the key point to obtain atomically smooth GaN surface and higher removal rate of GaN. Atomic force microscope (AFM) shows that the average surface roughness (Ra) is 0.0601nm.
  • Keywords
    III-V semiconductors; atomic force microscopy; catalysts; chemical mechanical polishing; gallium compounds; slurries; wide band gap semiconductors; AFM; CMP; Fe2+ activator; GaN; atomic force microscope; atomically smooth gallium nitride surface; average surface roughness; chemical mechanical polishing; high material removal rate; metal catalyst; slurry; sulfate radical oxidizer; Chemicals; Gallium nitride; Rough surfaces; Slurries; Surface morphology; Surface roughness; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Planarization/CMP Technology (ICPT), 2014 International Conference on
  • Conference_Location
    Kobe
  • Print_ISBN
    978-1-4799-5556-5
  • Type

    conf

  • DOI
    10.1109/ICPT.2014.7017290
  • Filename
    7017290
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=235690