Realization of atomic-level smooth surface of sapphire (0001) by chemical-mechanical planarization with nano colloidal silica abrasives

Author

Xiaolei Shi ; Guoshun Pan ; Yan Zhou ; Yuhong Liu

Author_Institution

State Key Lab. of Tribology, Tsinghua Univ., Beijing, China

fYear

2014

fDate

19-21 Nov. 2014

Firstpage

250

Lastpage

253

Abstract

In this paper, an innovative study is presented to characterize the chemical-mechanical planarization (CMP) performance on hexagonal sapphire (0001) wafer surface by using colloidal silica (SiO₂) abrasives based slurry with two different particle sizes, which indicates that the value of abrasive size is an important factor to determine the efficiency of CMP and the final planarization quality of wafer surface. The nano SiO₂ abrasives used in this study could perfectly optimize the quality of surface roughness. Furthermore, the authors put forward some suggestions to optimize the CMP efficiency and planarization quality of sapphire wafer.

Keywords

abrasives; planarisation; sapphire; semiconductor technology; silicon compounds; slurries; CMP efficiency; SiO₂; atomic-level smooth surface realization; chemical-mechanical planarization; hexagonal sapphire wafer surface; nanocolloidal silica abrasive; particle size; planarization quality; slurry; surface roughness quality; wafer surface; Abrasives; Planarization; Rough surfaces; Slurries; Surface roughness; Surface topography;

fLanguage

English

Publisher

ieee

Conference_Titel

Planarization/CMP Technology (ICPT), 2014 International Conference on

Conference_Location

Kobe

Print_ISBN

978-1-4799-5556-5

Type

conf

DOI

10.1109/ICPT.2014.7017292

Filename

7017292