Development of basic-type CMP/P-CVM fusion processing system (Type A) and its fundamental characteristics

Author

Shiozawa, Kousuke ; Sano, Yousuke ; Kurokawa, Satoru ; Miyashita, Tadakazu ; Sumizawa, Haruo ; Doi, Toshiya ; Aida, Hideo ; Oyama, Koki ; Yamauchi, Kazuto

Author_Institution

Grad. Sch. of Eng., Osaka Univ., Suita, Japan

fYear

2014

fDate

19-21 Nov. 2014

Firstpage

275

Lastpage

278

Abstract

We propose a chemical mechanical polishing (CMP)/Plasma Chemical Vaporization Machining (P-CVM) fusion processing and developed basic type CMP/P-CVM fusion processing, which consists of mechanical polish part, P-CVM part, and sample holder moving between them. As a result of basic experiments using silicon carbide as a sample, it is found that Peak to valley of the surface profile can be reduced from 1500 nm to 200-300 nm by 40-times repetition of the mechanical polishing followed by P-CVM and the decrease rate of the height of the mesa structures by a CMP/P-CVM fusion processing is approximately 3.5 times larger than that of the mechanical polish.

Keywords

chemical mechanical polishing; planarisation; plasma CVD; CMP-P-CVM fusion processing; chemical mechanical polishing; mesa structures; plasma chemical vaporization machining; sample holder; silicon carbide; size 1500 nm; size 200 nm to 300 nm; surface profile; Chemicals; Etching; Machining; Planarization; Plasmas; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Planarization/CMP Technology (ICPT), 2014 International Conference on

Conference_Location

Kobe

Print_ISBN

978-1-4799-5556-5

Type

conf

DOI

10.1109/ICPT.2014.7017298

Filename

7017298